Investigation of the performance of a direct borohydride fuel cell with low Pt/C catalyst loading under different operating conditions

Fuel cells are promising alternative energy converters in terms of preventing pollution, efficiency, and noise. Direct borohydride fuel cells (DBFCs) which are defined as a sub-class of polymer electrolyte membrane fuel cells (PEMFCs) and direct liquid fuel cells (DLFC) have increased attention recently since they offer a solution for hydrogen storage problem. However, the commercialization of DBFC is hindered by the need of high platinum loadings. Therefore, reducing the platinum content is crucial to develop cost-effective DBFC without compromising performance. This research focuses on the effects of operational parameters on the DBFC performance with low level Pt/C catalyst loading (anode: 0.32 mg/cm², cathode: 0.36 mg/cm²). The gas diffusion electrode was prepared by spray-coating technique. The peak power density of 19.95 mW/cm² was obtained at 80 ^°C when 1 mL/min was used as a flow rate of fuel.     

Polarization behaviour of femtosecond laser written waveguides in lithium niobate

In this work, we analysed the polarization of guided light in femtosecond laser written waveguides. The studied waveguides were performed with different laser pulse energies in an x-cut lithium niobate crystal. The guided intensities were experimentally measured and compared with numerical simulations reaching a qualitatively good accordance. This comparison allowed a verification of the “mechanical expansion theory” which is useful to compute the refractive index field. Also, information related to the modelling of waveguides generated with different laser pulse energies was obtained. Both of these facts are keys to design and manufacture optical circuits by using this technological approach.     

An electrical circuit analogy model for analyses and optimizations of the Stirling-type pulse tube cryocooler

The existing electrical circuit analogy (ECA) models are mainly used to optimize the inertance tube and to analyze the crude phase of the dynamic pressure and the volume flow rate. The specific analyses and optimizations of other components or the whole Stirling-type pulse tube cryocooler (SPTC) with the ECA model have not been carried out. In this paper, a new ECA model including the main components of the SPTC such as regenerator, pulse tube, phase shifter and reservoir has been developed. To improve the practicability of the ECA model, based on the basic governing equations, calculation expressions of the above components are worked out, and their equivalent analogical electrical elements are defined according to the analogy theory. Through the developed ECA model, the specific pressure and volume flow rate at any position can be acquired. Further optimizations on the SPTC based on the ECA model show that, with the same pressure and PV power at the warm end of the regenerator, there exists an optimal phase angle between the pressure and the volume flow rate for the SPTC to achieve the highest gross cooling capacity. In addition, with the same ratio of the pressure to the volume flow rate and the same phase angle between them at the warm end of the regenerator, when the regenerator ineffectiveness loss is neglected, the SPTC efficiency keeps constant with variations of the PV power, however, the efficiency will increase with the increase of the PV power if the loss is considered.     

Effects of annealing on copper substrate surface morphology and graphene growth by chemical vapor deposition

Understanding the mechanism of graphene synthesis by chemical vapor deposition and the effect of process parameters is critical for production of high-quality graphene. In the present work, we investigated the effect of H₂ concentration during annealing on evolution of Cu surface morphology, and on deposited graphene characteristics. Our results revealed that H₂ had a smoothening effect on Cu surface as its surface roughness was reduced significantly at high H₂ concentration along with the formation of surface facets, dents and nanometer-sized particles. Furthermore, H₂ content influenced the graphene morphology and its quality. A low H₂ concentration (0% and 2.5%) during annealing promoted uniform and good quality bilayer graphene. In contrast, a high concentration of H₂ (20% and 50%) resulted in multilayer, non-uniform and defective graphene. Interestingly, the annealed Cu surface morphology differed considerably from that obtained after deposition of graphene, indicating that graphene deposition has its own impact on Cu surface.     

Structural,optical and electrical properties of Cu2FeSnSe4 and Cu(In,Al)Se2 thin films

Cu-based semiconductors Cu₂FeSnSe₄ (CFTSe) and Cu(In, Al)Se₂ (CIAS) have been fabricated using radio-frequency magnetron sputtering combined with rapid thermal selenization processing. For CFTSe, the heating rate ranging from 60 to 150 °C/min results in a difference in structure, morphology and optical properties. Thin film exhibits a pure phase structure, smooth surface and a band gap of 1.19 eV as the heating rate elevated to 90 °C/min. Furthermore, the CFTSe thin film selenized at 90 °C/min own the smallest value of cell volume compared with the others samples, which represents a more stable structure. In terms of the other Cu-based material CIAS, three different selenization pressures, i.e., 1, 5 and 10 Torr, have been employed for CIAS preparation. Thin film transforms into single phase with dense morphology along with the pressure of 1 Torr. The diverse band gap of CIAS thin films from 1.34 to 2.18 eV attribute to two reasons: (i) the various Al content will affect the hybridization degree of Al–Se, and finally tunes the band structure, (ii) amounts of CuSe has a certain degree of effect on the band gap of the CIAS. In addition, the electrical properties of CFTSe and CIAS are also researched with the open circuit voltage (V_oc) of 94 and 365 mV, respectively, signifying potential applications of CFTSe and CIAS for the thin film solar cells.     

Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge-Trap Layered Electronics

The human brain is often likened to an incredibly complex and intricate computer, rather than electrical devices, consisting of billions of neuronal cells connected by synapses. Different brain circuits are responsible for coordinating and performing specific functions. The reward pathway of the synaptic plasticity in the brain is strongly related to the features of both drug addiction and relief. In the current study, a synaptic device based on layered hafnium disulfide (HfS₂) is developed for the first time, to emulate the behavioral mechanisms of drug dosage modulation for neuroplasticity. A strong gate-dependent persistent photocurrent is observed, arising from the modulation of substrate-trapping events. By controlling the polarity of gate voltage, the basic functions of biological synapses are realized under a range of light spiking conditions. Furthermore, under the control of detrapping/trapping events at the HfS₂/SiO₂ interface, positive/negative correlations of the A_n/A₁ index, which significantly reflected the weight change of synaptic plasticity, are realized under the same stimulation conditions for the emulation of the drug-related addition/relief behaviors in the brain. The findings provide a new advance for mimicking human brain plasticity.     

Luminescence at 2.8 μm: Er3+-doped chalcogenide micro-waveguide

This paper reports the fabrication of luminescent optical rib/ridge waveguides made of erbium doped Ga-Ge-Sb-S films deposited by RF magnetron sputtering. Several fluorescence emissions of Er³⁺ ions from the visible to the middle infrared spectral domain were clearly observed within the films. The study of the ⁴I_13/2 level lifetime enabled development of a suitable annealing treatment of the films to reach the value of the bulk counterpart while the variation in surface roughness was limited, thus ensuring reasonable optical losses (0.7–0.9 dB/cm). Amplification experiments were carried out at 1.54 μm leading to complete characterization of the erbium-doped micro-waveguide with ∼3.4 dB/cm on/off gain. A demonstration of mid-IR photoluminescence from Er³⁺-doped chalcogenide micro-waveguide was recorded at ∼2.76 μm. The multi-luminescence from the visible to mid-IR generated using erbium doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunication technologies or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.